BLS2731-110 TRAY NXP Semiconductors, BLS2731-110 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS2731-110 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-110 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 500000 mW
• Package / Case: SOT-423
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS2731-110,114

Philips Semiconductors
2001 Dec 05
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
input
L6
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
L5
L4
30
L3
L2
L1
5
L7
L8
L9
L12
L10
30
L11
L13
C2
C1
L14
MGM540
RC
BLS2731-110
output
40
Product specification