BLS2731-110 TRAY NXP Semiconductors, BLS2731-110 TRAY Datasheet - Page 12
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BLS2731-110 TRAY
Manufacturer Part Number
BLS2731-110 TRAY
Description
RF Bipolar Power BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.BLS2731-110114.pdf
(12 pages)
Specifications of BLS2731-110 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
500000 mW
Package / Case
SOT-423
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS2731-110,114
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
613524/05/pp
12
Date of release:
2001 Dec 05
Fax: +31 40 27 24825
Document order number:
9397 750 09083
SCA73