BLS3135-20 TRAY NXP Semiconductors, BLS3135-20 TRAY Datasheet - Page 4

• Manufacturer Part Number: BLS3135-20 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-20 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-20,114

Philips Semiconductors
2000 Feb 01
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4
CB
CB
Fig.2
(W)
(dB)
P L
= 40 V; class-C; t
= 40 V; class-C; t
25
20
15
10
50
C
40
30
20
10
5
0
0
0
0
Collector efficiency as a function of load
power; typical values.
Load power as a function of drive power;
typical values.
5
1
p
p
= 100 s;
= 100 s;
10
2
= 10%.
= 10%.
15
(2)
(1)
(3)
3
20
(2)
P D (W)
P L (W)
MCD863
MCD865
(3)
(1)
25
4
4
handbook, halfpage
handbook, halfpage
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
V
Fig.5
CB
CB
Fig.3
(dB)
(dB)
G p
G p
= 40 V; class-C; t
= 40 V; class-C; P
10
10
8
6
4
2
0
8
6
4
2
0
3
0
Power gain and efficiency as functions of
frequency; typical values.
Power gain as a function of load power;
typical values.
G p
C
5
p
L
= 100 s;
3.2
= 20 W; t
10
p
= 100 s; = 10%.
= 10%.
15
3.4
BLS3135-20
Product specification
f (GHz)
20
P L (W)
MCD866
MCD864
(1)
(2)
(3)
3.6
25
50
40
30
20
10
0
(%)
C