BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 7

RF MOSFET Small Signal LDMOS TNS

BLS6G2731S-120

Manufacturer Part Number
BLS6G2731S-120
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G2731S-120

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.135 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
33 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Application
S-Band
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
60V
Output Power (max)
120W(Typ)
Power Gain (typ)@vds
13.5@32VdB
Frequency (min)
2.7GHz
Frequency (max)
3.1GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13S
Drain Source Resistance (max)
135@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
48%
Mounting
Surface Mount
Mode Of Operation
Pulsed RF
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS6G2731S-120,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLS6G2731S-120
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLS6G2731S-120
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
8. Test information
Table 9.
See
BLS6G2731-120_6G2731S-120_1
Product data sheet
Component
C1, C2
C3
C4, C6, C9, C10
C5, C11
C7, C8
C12
C13
R1
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit
Figure
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with
See
10.
List of components
Table 9
for list of components.
C3
C1
C4
C5
R1
Description
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 47 F; 20 V
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 100 pF
electrolytic capacitor
multilayer ceramic chip capacitor 10 F; 35 V
SMD resistor
C6
C7
BLS6G2731-120; BLS6G2731S-120
Rev. 01 — 14 November 2008
Value
47 F; 63 V
56
C8
C9
C10
LDMOS S-band radar power transistor
C11
Remarks
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100B or equivalent
SMD 0603
r
= 6.15 and thickness = 0.64 mm.
C12
C2
C13
001aaj099
© NXP B.V. 2008. All rights reserved.
Rev3
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