BLS6G2731S-120 NXP Semiconductors, BLS6G2731S-120 Datasheet - Page 2

• Manufacturer Part Number: BLS6G2731S-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731S-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 33 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: S-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 60V
• Output Power (max): 120W(Typ)
• Power Gain (typ)@vds: 13.5@32VdB
• Frequency (min): 2.7GHz
• Frequency (max): 3.1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 135@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 48%
• Mounting: Surface Mount
• Mode Of Operation: Pulsed RF
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS6G2731S-120,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G2731-120_6G2731S-120_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G2731-120 (SOT502A)
1
2
3
BLS6G2731S-120 (SOT502B)
1
2
3
Type number
BLS6G2731-120
BLS6G2731S-120 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
BLS6G2731-120; BLS6G2731S-120
Package
Name
-
Rev. 01 — 14 November 2008
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
[1]
[1]
LDMOS S-band radar power transistor
Simplified outline
1
2
1
2
3
Min
-
-
-
3
0.5
65
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
60
+13
33
+150
225
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
Unit
V
V
A
C
C
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