BFR92AW /T3 NXP Semiconductors, BFR92AW /T3 Datasheet - Page 5

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BFR92AW /T3

Manufacturer Part Number
BFR92AW /T3
Description
RF Bipolar Small Signal TAPE13 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR92AW /T3

Dc Current Gain Hfe Max
65
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Package / Case
UMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR92AW,135
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
V
V
(GHz)
CE
CE
Fig.3
f T
h FE
= 10 V.
= 5 V; f = 500 MHz; T
Fig.5
120
80
40
6
4
0
0
2
1
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
amb
= 25 C.
10
20
I
C
(mA)
I
C
(mA)
MGC884
MCD074
10
30
Rev. 03 - 12 March 2008
2
I
C
(pF)
= 0; f = 1 MHz.
C re
Fig.4
1.0
0.8
0.6
0.4
0.2
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
4
8
12
Product specification
BFR92AW
16
V
CB
MGC883
(V)
5 of 13
20

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