BF1208D T/R NXP Semiconductors, BF1208D T/R Datasheet - Page 5

• Manufacturer Part Number: BF1208D T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1208D T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SS-Mini-6
• Application: VHF/UHF
• Channel Type: N
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 36@5V@Amp A/35@5V@Amp BdB
• Noise Figure (max): 1.7@Amp A/2@Amp BdB
• Package Type: SOT-666
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.1@5V@Gate 1/3.4@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1208D,115

NXP Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
BF1208D_1
Product data sheet
Symbol
C
C
C
C
G
NF
y
Fig 2. Drain currents of MOSFET A and B as a
fs
iss(G1)
iss(G2)
oss
rss
tr
(mA)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
I
D
20
16
12
8
4
0
function of V
D(B)
D(B)
D(B)
D(A)
D(A)
D(A)
0
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
transducer power gain
noise figure
Dynamic characteristics for amplifier A
; R
; R
; R
; R
; R
; R
G1
G1
G1
G1
G1
G1
(4)
(5)
(6)
= 68 k .
= 86 k .
= 100 k .
= 100 k .
= 86 k .
= 68 k .
8.1 Dynamic characteristics for amplifier A
1
amb
= 25 C; V
GG
2
G2-S
3
= 4 V; V
Conditions
f = 100 MHz; T
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
4
(1)
(2)
(3)
001aag356
S
V
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
GG
= B
DS
(V)
= 5 V; I
S(opt)
5
Rev. 01 — 16 May 2007
; B
[1]
D
L
S
j
S
S
= 19 mA; unless otherwise specified.
= B
= 20 mS; B
= 25 C
= Y
= Y
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
Fig 3. Functional diagram
S
= 0 S
V
V
L
L
GG
GG
= 0.5 mS
= 1 mS
L
= 1 mS
= 5 V: amplifier A is off; amplifier B is on.
= 0 V: amplifier A is on; amplifier B is off.
G1A
G1B
G2
R
G1
Dual N-channel dual gate MOSFET
V
GG
[2]
[2]
[2]
[2]
Min
26
-
-
-
-
32
28
24
-
-
-
001aac205
Typ
31
2.1
3.4
0.8
30
36
32
28
3.0
0.9
1.1
BF1208D
© NXP B.V. 2007. All rights reserved.
DA
S
DB
Max Unit
41
2.6
-
-
-
40
36
33
-
1.5
1.7
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
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