J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 5

• Manufacturer Part Number: J176 AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of J176 AMO

• Configuration: Single
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 35 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SPT
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 35mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J176,126

NXP Semiconductors
PACKAGE OUTLINE
April 1995
P-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
5
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
PMBFJ174 to 177
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23