J176 AMO NXP Semiconductors, J176 AMO Datasheet

RF JFET AMMORA FET-RFSS

J176 AMO

Manufacturer Part Number
J176 AMO
Description
RF JFET AMMORA FET-RFSS
Manufacturer
NXP Semiconductors
Datasheets

Specifications of J176 AMO

Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SPT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
35mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
J176,126
Product specification
File under Discrete Semiconductors, SC07
DATA SHEET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
DISCRETE SEMICONDUCTORS
April 1995

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J176 AMO Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 ...

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Philips Semiconductors P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING ...

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Philips Semiconductors P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (DC) Total power dissipation amb Storage temperature range ...

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Philips Semiconductors P-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS unless otherwise specified j Input capacitance MHz Feedback ...

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Philips Semiconductors P-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 ...

Page 6

Philips Semiconductors P-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

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