J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 3
![RF JFET AMMORA FET-RFSS](/photos/16/4/160465/to3_sml.jpg)
J176 AMO
Manufacturer Part Number
J176 AMO
Description
RF JFET AMMORA FET-RFSS
Manufacturer
NXP Semiconductors
Specifications of J176 AMO
Configuration
Single
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Maximum Operating Temperature
+ 150 C
Package / Case
SPT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
35mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
J176,126
NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
April 1995
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (d.c.)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source ON-resistance
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
up to T
V
V
V
I
I
V
G
GS
D
= 1 A; V
DS
DS
DS
= 10 nA; V
= 20 V; V
= 15 V; V
= 15 V; V
= 0,1 V; V
amb
= 25 C
DS
DS
DS
= 0
GS
GS
GS
= 0
= 15 V
= 0
(1)
= 0
= 10 V
3
R
V
I
I
I
V
R
V
V
V
I
P
T
T
GSS
th j-a
(BR)GSS
GS off
stg
j
DS on
GSO
GDO
tot
DSX
DSS
G
DS
max.
max.
max.
max.
max.
max.
=
PMBFJ174
135
20
30
10
85
1
1
5
PMBFJ174 to 177
65 to 150
175
125
70
30
430
300
150
30
30
30
50
1
1
7
3
6
Product specification
176
250
35
30
1
1
2
1
4
2,25
177
300
1,5
0,8
20
30 V
1 nA
1 nA
K/W
V
V
V
mA
mW
C
C
mA
mA
V
V