J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 4

• Manufacturer Part Number: J176 AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of J176 AMO

• Configuration: Single
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 35 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SPT
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 35mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J176,126

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
April 1995
handbook, halfpage
Input capacitance, f = 1 MHz
Feedback capacitance, f = 1 MHz
Switching times (see Fig.2
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Test conditions:
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
V
V
V
GS
GS
GS
= 10 V; V
= V
= 10 V; V
DS
Fig.2 Switching times test circuit.
= 0
V in
DS
DS
= 0 V
= 0 V
50
V DD
50
R L
D.U.T
3)
MBK292
V out
4
C
C
C
t
t
t
t
t
t
V
R
V
d
r
on
s
f
off
V
GS off
GS on
is
is
rs
L
DD
OUTPUT
INPUT
Fig.3 Input and output waveforms;
V GSoff
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
typ.
t
d
10%
t s
t
r
J174 J175
= t
560 1200
10%
10
15
10
12
t f
on
2
5
7
5
0
90%
; t
s
30
10
15
10
20
30
+ t
8
4
5
6
8
0
f
= t
Product specification
90%
J176 J177
2000 2900
J174; J175;
J176; J177
off
t d
15
20
35
15
20
35
.
6
6
0
90%
t r
20 ns
25 ns
45 ns
20 ns
25 ns
45 ns
6 V
3 V
0 V
10%
MBK293
pF
pF
pF