J176 AMO NXP Semiconductors, J176 AMO Datasheet - Page 2

• Manufacturer Part Number: J176 AMO
• Description: RF JFET AMMORA FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of J176 AMO

• Configuration: Single
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 35 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SPT
• Channel Type: P
• Gate-source Voltage (max): 30V
• Drain Current (max): 35mA
• Drain-gate Voltage (max): 30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J176,126

Philips Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
April 1995
1 =
2 =
3 =
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
DS
DS
source
gate
drain
= 0.1 V; V
= 15 V; V
amb
= 50 C
GS
GS
= 0
= 0
handbook, halfpage
V
P
R
I
I
GSO
tot
DS on
V
G
DSS
DS
Fig.1 Simplified outline and symbol, TO-92.
2
1
2
3
max.
max.
max.
max.
min.
max.
max.
J174
135
85
20
J175
125
70
MAM388
7
400
30
30
50
g
J176
250
35
Product specification
2
J174; J175;
J176; J177
d
s
J177
300
1.5
20
V
V
mA
mW
mA
mA