BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 8

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
Document ID
BLF6G20-110_BLF6G20LS-110_3 20090113
Modifications:
BLF6G20-110_BLF6G20LS-110_2 20081117
BLF6G20-110_BLF6G20LS-110_1 20080128
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
EVM
GSM
LDMOS
LDMOST
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Abbreviations
Release date Data sheet status
•
•
Figure 1 on page
Figure 2 on page
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Error Vector Magnitude
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
Product data sheet
Product data sheet
Preliminary data sheet -
4: Power gain curve corrected
4: Power gain curve corrected
Change
notice
-
-
Supersedes
BLF6G20-110_BLF6G20LS-110_2
BLF6G20-110_BLF6G20LS-110_1
-
Power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
8 of 10