BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 5

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
8. Test information
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
Table 8.
[1]
[2]
[3]
Component
C1
C2
C3
C4, C8
C5, C7, C12, C13
C6, C10, C11
C9
C14
C15
C16
Q1
R1
R2
Fig 4.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
AVX or capacitor of same quality.
C1
INPUTBOARD
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
and thickness = 0.76 mm.
See
Component layout
List of components (see
Table 8
TB
C15
C4
C5
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
BLF6G20-110 or BLF6G20LS-110
SMD resistor
SMD resistor
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
C16
R1
C7
R2
Figure
C6
4).
Q1
C11
C10
C12
C9
Value
8.2 pF
10 pF
100 F; 63 V
4.7 F; 25 V
220 nF; 50 V
13 pF
330 nF; 50 V
1.0 pF
1.5 pF
0.6 pF
-
1.0
2.7
C3
C13
C8
Power LDMOS transistor
C14
© NXP B.V. 2009. All rights reserved.
OUTPUTBOARD
TB
[1]
[1]
[2]
[3]
[1]
[3]
[1]
[1]
[1]
001aah517
Remarks
C2
r
= 3.5
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