BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 2

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G20-110 (SOT502A)
1
2
3
BLF6G20LS-110 (SOT502B)
1
2
3
Type number
BLF6G20-110
BLF6G20LS-110 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
2
Max
65
+13
29
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 10
Unit
V
V
A
C
C