BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G20-110 and BLF6G20LS-110 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
IMD3
ACPR
DSS
DSX
GSS
j
fs
DS
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25 C unless otherwise specified.
= 28 V; I
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from
junction to case
Dq
= 900 mA; P
DS
= 28 V; I
1
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
= 1932.5 MHz; f
L
Dq
= 110 W (CW); f = 1990 MHz.
= 900 mA; T
Conditions
T
P
case
L
2
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 25 W (CW)
= 1942.5 MHz; f
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 5.25 A
= 80 C;
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 13 V; V
= V
= 0 V; V
GS(th)
GS(th)
= 25 C; unless otherwise specified; in a
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 150 mA
= 950 mA
= 7.5 A
= 25 W
= 25 W
= 25 W
= 25 W
Type
BLF6G20-110
BLF6G20LS-110
= 28 V
= 28 V;
3
= 0 V
= 1977.5 MHz; f
Power LDMOS transistor
Min
65
1.4
1.6
-
22.3
-
-
-
-
Min
-
18
28
-
-
4
Typ
-
2
2.1
-
27
-
10.5
0.1
2.1
© NXP B.V. 2009. All rights reserved.
= 1987.5 MHz;
Typ
25
19
32
34
38
Typ
0.52
0.45
Max
-
2.4
2.6
5
-
450
-
0.160
-
Max
-
-
-
28
33
Unit
K/W
K/W
3 of 10
Unit
W
dB
%
dBc
dBc
Unit
V
V
V
A
nA
S
pF
A