BLF6G10LS-200R NXP Semiconductors, BLF6G10LS-200R Datasheet - Page 8

• Manufacturer Part Number: BLF6G10LS-200R
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 200W
• Power Gain (typ)@vds: 20@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18S
• Drain Source Resistance (max): 60(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10LS-200R,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G10LS-200R_1
Preliminary data sheet
Document ID
BLF6G10LS-200R_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
Release date
20080121
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Rev. 01 — 21 January 2008
Data sheet status
Preliminary data sheet
BLF6G10LS-200R
Change notice
-
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
Supersedes
-
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