BLF6G10LS-200R NXP Semiconductors, BLF6G10LS-200R Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-200R
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 200W
• Power Gain (typ)@vds: 20@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18S
• Drain Source Resistance (max): 60(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10LS-200R,112

NXP Semiconductors
BLF6G10LS-200R_1
Preliminary data sheet
Fig 2. Two-tone CW power gain and drain efficiency
(dB)
G
p
21
19
17
15
V
as functions of peak envelope load power;
typical values
0
DS
= 28 V; I
7.2 One-tone CW
7.3 Two-tone CW
G
D
Dq
p
120
= 1400 mA; f = 881 MHz ( 100 kHz).
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
V
typical values
DS
240
= 28 V; I
P
L(PEP)
001aah519
Dq
(W)
= 1400 mA; f = 881 MHz.
(dB)
Rev. 01 — 21 January 2008
G
360
p
21
19
17
15
60
40
20
0
(%)
0
D
40
G
Fig 3. Two-tone CW intermodulation distortion as
D
p
(dBc)
IMD
80
20
30
40
50
60
V
function of peak envelope load power; typical
values
0
DS
= 28 V; I
120
BLF6G10LS-200R
Dq
160
60
= 1400 mA; f = 881 MHz ( 100 kHz).
001aah518
P
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
120
D
P
L(PEP)
© NXP B.V. 2008. All rights reserved.
001aah520
IMD3
IMD5
IMD7
(W)
180
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