BLF6G10LS-200R NXP Semiconductors, BLF6G10LS-200R Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-200R
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 200W
• Power Gain (typ)@vds: 20@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18S
• Drain Source Resistance (max): 60(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10LS-200R,112

NXP Semiconductors
Table 8.
All capacitors should be soldered vertically except C20.
[1]
[2]
BLF6G10LS-200R_1
Preliminary data sheet
Component
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
C2
C5, C6
C7, C8, C9, C10
C13, C14
C15
C17, C18
L1
Q1
R1, R2, R3
Fig 7. Component layout
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
The drawing is not to scale.
List of components (see
Table 8
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
Ferrite SMD bead
BLF6G10LS-200R
SMD resistor
R1
C1
C3
Figure 6
800 -1000 MHz
C2
NXP
V1.0
IN
and
Rev. 01 — 21 January 2008
R2
Figure
7)
Value
68 pF
13 pF
10 pF
220 nF
4.7 F; 50 V
1.5 pF
220 F; 63 V
-
-
9.1 ; 0.1 W
Q1
800 -1000 MHz
C5
C6
C7
NXP
OUT
V1.0
C8
[1]
[1]
[1]
[2]
[1]
C9
C11 C13
C10
Remarks
solder vertically
solder vertically
solder vertically
Vishay VJ1206Y224KXB
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C12
BLF6G10LS-200R
C14
C17
r
= 3.5 and
Power LDMOS transistor
L1
C18
© NXP B.V. 2008. All rights reserved.
R3
C15
C16
001aah524
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