BFG540 T/R NXP Semiconductors, BFG540 T/R Datasheet - Page 7

• Manufacturer Part Number: BFG540 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG540 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG540,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
Fig.11 Intermodulation distortion as a function of
V
Fig.13 Minimum noise figure and associated
CE
F min
(dB)
(dB)
d im
= 8 V.
20
30
40
50
60
70
5
4
3
2
1
0
10
1
collector current.
available gain as functions of collector
current.
2000 MHz
1000 MHz
900 MHz
500 MHz
20
30
10
G ass
F min
40
I C (mA)
f = 900 MHz
50
1000 MHz
2000 MHz
I C (mA)
MRA760
MEA973
Rev. 05 - 21 November 2007
60
10
15
20
10
0
2
G ass
5
(dB)
5
handbook, halfpage
handbook, halfpage
Fig.12 Second order intermodulation distortion as
V
Fig.14 Minimum noise figure and associated
CE
F min
(dB)
(dB)
d 2
= 8 V.
20
30
40
50
60
70
5
4
3
2
1
0
10
10
2
40 mA
10 mA
a function of collector current.
available gain as functions of frequency.
I C = 10 mA
20
F min
BFG540; BFG540/X;
30
40 mA
10
G ass
3
40
f (MHz)
Product specification
BFG540/XR
50
I C (mA)
MRA761
MEA972
7 of 14
60
10
15
20
10
0
G ass
5
4
(dB)
5