BFG540 T/R NXP Semiconductors, BFG540 T/R Datasheet - Page 2

• Manufacturer Part Number: BFG540 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG540 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG540,215

NXP Semiconductors
FEATURES
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic
SOT143B and SOT143R packages.
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
NPN 9 GHz wideband transistor
PINNING
BFG540 (Fig.1) Code: %MG
1
2
3
4
BFG540/X (Fig.1) Code: %MM
1
2
3
4
BFG540/XR (Fig.2) Code: %MR
1
2
3
4
PIN
Rev. 05 - 21 November 2007
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
DESCRIPTION
handbook, 2 columns
handbook, 2 columns
BFG540; BFG540/X;
Top view
4
1
3
2
Top view
Fig.1 SOT143B.
Fig.2 SOT143R.
Product specification
BFG540/XR
MSB014
MSB035
3
2
4
1
2 of 14