BFG540 T/R NXP Semiconductors, BFG540 T/R Datasheet - Page 10

RF Bipolar Small Signal TAPE7 TNS-RFSS

BFG540 T/R

Manufacturer Part Number
BFG540 T/R
Description
RF Bipolar Small Signal TAPE7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG540 T/R

Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-143
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG540,215
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
C
C
= 40 mA; V
= 40 mA; V
CE
CE
= 8 V.
= 8 V; Z
o
= 50 .
Fig.19 Common emitter reverse transmission coefficient (s
180
180
Fig.20 Common emitter output reflection coefficient (s
0.25
0
0.20
135
135
135
135
0.2
0.2
0.2
0.15
0.5
0.5
Rev. 05 - 21 November 2007
0.10
3 GHz
0.5
0.05
90
90
90
90
1
1
1
40 MHz
3 GHz
2
2
2
40 MHz
5
45
45
45
45
5
5
MRA759
MRA758
BFG540; BFG540/X;
22
).
0
0
12
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540/XR
10 of 14

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