BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 9

• Manufacturer Part Number: BLT81 T/R
• Description: RF Bipolar Power NPN 6-7.5V 500mA UHF
• Manufacturer: NXP Semiconductors

Specifications of BLT81 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT81,115

Philips Semiconductors
1996 May 09
handbook, halfpage
handbook, halfpage
UHF power transistor
Class-B; V
Class-B; V
Fig.9
(dB)
G p
( )
Z i
10
10
8
6
4
2
0
8
6
4
2
0
800
800
Fig.11 Power gain as a function of
CE
Input impedance as a function of frequency
(series components); typical values.
CE
x i
r i
= 7.5 V; P
= 7.5 V; P
840
840
frequency; typical values.
L
L
= 1.2 W; T
= 1.2 W; T
880
880
s
s
920
920
60 C.
60 C.
960
960
f (MHz)
f (MHz)
MRC091
MRC089
1000
1000
9
handbook, halfpage
handbook, halfpage
Class-B; V
Fig.10 Load impedance as a function of frequency
( )
Z L
20
16
12
Fig.12 Definition of transistor impedance.
8
4
0
800
CE
(series components); typical values.
= 7.5 V; P
Z i
840
L
R L
X L
= 1.2 W; T
880
s
Z L
920
60 C.
MBA451
Product specification
960
f (MHz)
MRC092
BLT81
1000