BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet

RF Bipolar Power NPN 6-7.5V 500mA UHF

BLT81 T/R

Manufacturer Part Number
BLT81 T/R
Description
RF Bipolar Power NPN 6-7.5V 500mA UHF
Manufacturer
NXP Semiconductors
Datasheet
1.BLT81115.pdf (12 pages)

Specifications of BLT81 T/R

Dc Collector/base Gain Hfe Min
25
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
9.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.5 A
Power Dissipation
2000 mW
Package / Case
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLT81,115
Product specification
Supersedes data of November 1992
DATA SHEET
BLT81
UHF power transistor
DISCRETE SEMICONDUCTORS
1996 May 09

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BLT81 T/R Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 ...

Page 2

Philips Semiconductors UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. APPLICATIONS Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN ...

Page 3

Philips Semiconductors UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC average collector current ...

Page 4

Philips Semiconductors UHF power transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage (BR)CEO V emitter-base breakdown voltage (BR)EBO I collector leakage current CES h DC current gain ...

Page 5

Philips Semiconductors UHF power transistor APPLICATION INFORMATION RF performance common emitter test circuit (see note 1 and Fig.7). s MODE OF OPERATION CW, class-B narrow band Note the temperature at the ...

Page 6

Philips Semiconductors UHF power transistor Test circuit information handbook, full pagewidth input Fig.7 Common emitter test circuit for class-B operation at 900 MHz. 1996 May DUT C5 C7 ...

Page 7

Philips Semiconductors UHF power transistor List of components used in test circuit (see Figs 7 and 8) COMPONENT C1, C14 multilayer ceramic chip capacitor; note 1 100 pF C2 multilayer ceramic chip capacitor; note C3, C5, C11, ...

Page 8

Philips Semiconductors UHF power transistor handbook, full pagewidth strap strap C2 C1 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth ...

Page 9

Philips Semiconductors UHF power transistor 10 handbook, halfpage 800 840 880 920 Class Fig.9 Input ...

Page 10

Philips Semiconductors UHF power transistor PACKAGE OUTLINE handbook, full pagewidth o 16 max 1.80 max Dimensions in mm. 1996 May 09 S seating plane 0.32 6.7 0.24 6.3 3.1 2.9 0.10 0. 0.80 2.3 ...

Page 11

Philips Semiconductors UHF power transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. (02) 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (01) 60 101-1256, Fax. (01) ...

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