BLT81 T/R NXP Semiconductors, BLT81 T/R Datasheet - Page 5

• Manufacturer Part Number: BLT81 T/R
• Description: RF Bipolar Power NPN 6-7.5V 500mA UHF
• Manufacturer: NXP Semiconductors

Specifications of BLT81 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 9.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT81,115

Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Note
1. T
Ruggedness in class-AB operation
The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; V
1996 May 09
handbook, halfpage
UHF power transistor
Class-B; f = 900 MHz; T
(1) V
(2) V
Fig.5
s
(dB)
G p
is the temperature at the soldering point of the collector pin.
10
CE
CE
CW, class-B narrow band
8
6
4
2
0
MODE OF OPERATION
0
= 7.5 V.
= 6 V.
Power gain and collector efficiency as
functions of load power; typical values.
G p
0.4
(4)
(3)
(1)
(2)
(3) V
(4) V
s
s
60 C.
60 C in a common emitter test circuit (see note 1 and Fig.7).
0.8
CE
CE
= 7.5 V.
= 6 V.
1.2
CE
= 9 V; P
1.6
P L (W)
MRC088
C
(MHz)
L
2.0
900
= 1.2 W; T
100
80
60
40
20
0
f
(%)
C
5
s
handbook, halfpage
60 C.
V
(V)
7.5
Class-B; f = 900 MHz; T
(1) V
6
CE
(W)
P L
2.5
2.0
1.5
1.0
0.5
CE
Fig.6
0
0
= 7.5 V.
Load power as a function of input
power; typical values.
100
(W)
1.2
1.2
P
L
s
60 C.
200
(2) V
CE
typ. 6.5
300
typ. 8
(dB)
= 6 V.
G
6
p
(1)
(2)
Product specification
400
P IN (mW)
MRC093
BLT81
typ. 77
typ. 77
500
(%)
60
C