BFR93AR T/R NXP Semiconductors, BFR93AR T/R Datasheet - Page 4

• Manufacturer Part Number: BFR93AR T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR93AR,215

NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
Fig 2. Power derating curve
(mW)
P
tot
400
300
200
100
0
L1 = L3 = 5 H choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
0
50
100
75
input
V
BB
150
1.5 nF
1 nF
T
sp
L1
mra702
( C)
Rev. 01 — 30 November 2006
10 k
200
270
3.3 pF
L2
Fig 3. DC current gain as a function of collector
1 nF
L3
h
FE
DUT
120
18
80
40
0
V
current
1.5 nF
0
CE
= 5 V; T
0.68 pF
1 nF
mbb251
j
V
= 25 C.
CC
output
10
75
NPN 6 GHz wideband transistor
20
BFR93AR
I
© NXP B.V. 2006. All rights reserved.
C
(mA)
mcd087
30
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