BLT70 T/R NXP Semiconductors, BLT70 T/R Datasheet - Page 6

• Manufacturer Part Number: BLT70 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT70 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT70,115

Philips Semiconductors
Test circuit information
1996 Feb 06
handbook, full pagewidth
UHF power transistor
V
input
50
S
= V
bias
= typ. 4.8 V.
C1
C2
C3
L1
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
C5
C4
L2
C7
L3
C6
L4
R1
T1
L5
V bias
R2
6
DUT
L6
L8
C11
C8
C9
V S
C10
L7
R3
L9
C12
L10
Product specification
C13
C14
BLT70
MGD205
output
50