BLT70 T/R NXP Semiconductors, BLT70 T/R Datasheet - Page 2

• Manufacturer Part Number: BLT70 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT70 T/R

• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT70,115

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
PINNING - SOT223H
QUICK REFERENCE DATA
RF performance at T
1996 Feb 06
Very high efficiency
Low supply voltage.
Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
UHF power transistor
MODE OF OPERATION
PIN
1
2
3
4
CW, class-AB
SYMBOL
s
e
b
e
c
60 C in a common emitter test circuit (see Fig.7).
emitter
base
emitter
collector
(MHz)
DESCRIPTION
900
f
V
(V)
4.8
CE
2
handbook, halfpage
Top view
Fig.1 Simplified outline and symbol.
(mW)
600
P
1
L
2
4
(dB)
G
3
6
p
Product specification
b
MAM043 - 1
BLT70
(%)
60
C
c
e