TGF2022-60 TriQuint, TGF2022-60 Datasheet - Page 3

• Manufacturer Part Number: TGF2022-60
• Description: RF GaAs DC-20GHz 6.0mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-60

• Mounting Style: SMD/SMT
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031683

Power Tuned:
SYMBOL
Efficiency
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
1/ Values in this table are from measurements taken from a 0.75mm unit pHEMT cell at 10 and 18 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
Tuned:
Γ
Γ
Gain
Gain
Psat
PAE
Psat
PAE
L
L
2/
2/
(channel to backside of
carrier)
θ
JC
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
Thermal Resistance
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
Parameter
PARAMETER
Load Reflection
Load Reflection
Power Gain
Power Gain
coefficient
coefficient
RF CHARACTERIZATION TABLE 1/
THERMAL INFORMATION
0.898 ∠ 175.1
Idq = 448 mA
0.925 ∠171.5
Vd = 10V
Vd = 12 V
Idq = 448 mA
Pdiss = 5.38 W
(T
38.8
51.6
12.3
37.6
57.0
12.4
Test Conditions
A
= 25 °C, Nominal)
TABLE IV
TABLE III
f = 10 GHz
Idq = 448 mA
0.891 ∠173.7
0.908 ∠171.2
Vd = 12V
39.4
12.1
39.0
53.8
12.4
50
0.943 ∠174.5
Idq = 448 mA
0.93 ∠174.9
(
T
146
Vd = 10V
o
CH
C)
37.6
37.2
44.0
7.8
7.9
42
Product Datasheet
f = 18 GHz
(°C/W)
14.2
θ
JC
Idq = 448 mA
0.949 ∠174.4
0.942 ∠174.6
Vd = 12V
TGF2022-60
September 7, 2007
38.1
37.9
41.0
7.6
7.6
38
1.4E+6
(HRS)
T
M
Rev -
UNITS
dBm
dBm
dB
dB
%
%
-
-
3