TGF2022-48 TriQuint, TGF2022-48 Datasheet - Page 3

• Manufacturer Part Number: TGF2022-48
• Description: RF GaAs DC-20GHz 4.8mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-48

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031682

Power Tuned:
SYMBOL
Efficiency
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz
Tuned:
Γ
OIP3
Gain
Gain
Psat
PAE
Γ
Psat
PAE
L
L
2/
2/
θ
(channel to backside of carrier)
JC
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
Thermal Resistance
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
Parameter
Load Reflection
Load Reflection
PARAMETER
Power Gain
Power Gain
Output TOI
coefficient
coefficient
RF CHARACTERIZATION TABLE 1/
THERMAL INFORMATION
0.870 ∠ 173.9
Idq = 360 mA
Vd = 12 V
Idq = 360 mA
Pdiss = 4.32 W
0.856 ∠169.8
Vd = 10V
Test Conditions
(T
37.9
52.4
12.9
37.3
58.3
13
46
A
TABLE IV
= 25 °C, Nominal)
TABLE III
f = 10 GHz
Idq = 360 mA
0.857 ∠171.8
0.858 ∠169.5
Vd = 12V
38.6
51.9
12.9
36.5
56.0
13
45
(
T
145
o
CH
C)
0.930 ∠173.3
Idq = 360 mA
0.911 ∠173.9
Vd = 10V
(°C/W)
37.1
41.5
38.3
46.0
8.3
8.5
46
17.3
θ
Product Datasheet
JC
f = 18 GHz
1.6 E+6
(HRS)
Idq = 360 mA
0.917 ∠173.4
0.94 ∠172.8
T
Vd = 12V
M
TGF2022-48
September 7, 2007
37.7
37.0
37.1
42.5
8.0
8.3
45
Rev -
UNITS
dBm
dBm
dBm
dB
dB
%
%
-
-
3