PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 6

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
See next page for reference circuit information
Data Sheet
MHz
2200
2170
2140
2110
2080
Z Source
2.02
2.12
2.23
2.34
2.47
R
Z Source W
G
–6.03
–6.26
–6.50
–6.75
–7.01
D
S
jX
Z Load
1.70
1.72
1.73
1.75
1.77
R
Z Load W
6 of 14
–4.67
–4.76
–4.85
–4.95
–5.05
jX
2200 MHz
Z Load
Z Source
PTFB211803EL
2080 MHz
PTFB211803FL
Rev. 05, 2010-11-10
Z
0
= 50 W