PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 11

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Confidential, Limited Internal Distribution
Reference Circuit
Components Information
Component
Input
C101, C106, C107
C102, C105
C103, C104
C108
C801, C802, C803
R101, R102, R802, R803
R801
R804
R805
S1
S2
S4
Output
C201
C202, C210
C203
C204, C205
C206, C208
C207, C209
Data Sheet
(cont.)
Description
Chip capacitor,10 pF
Chip capacitor, 0.1 μF
Chip capacitor, 4.71 μF
Chip capacitor, 2.1 pF
Capacitor, 1000 pF
Resistor, 10 W
Resistor, 1300 W
Resistor, 100 W
Resistor, 1200 W
Transistor
Voltage Regulator
Potentiometer, 2k W
Chip capacitor, 10 pF
Capacitor, 10 μF
Chip capacitor, 0.3 pF
Capacitor, 100 μF
Chip capacitor, 2.2 μF
Chip capacitor, 1 μF
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PTFB211803EL
PTFB211803FL
Rev. 05, 2010-11-10