PTFB211803EL V1 R250 Infineon Technologies, PTFB211803EL V1 R250 Datasheet - Page 3

• Manufacturer Part Number: PTFB211803EL V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211803EL V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.05 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211803ELV1R25NT

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
19
18
17
16
15
50
40
30
20
10
2080
Single-carrier WCDMA, 3GPP Broadband
33
V
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
– DRAFT ONLY
DD
V
DD
= 30 V, I
35
2100
Gain
= 30 V, I
Two-carrier WCDMA 3GPP
37
Efficiency
2120
DQ
Output Power (dBm)
Frequency (MHz)
DQ
= 1.30 A, ƒ = 2170 MHz, 3GPP
39
BW 3.84 MHz
Efficiency
= 1.30 A, P
2140
Gain
ACP
IRL
41
(data taken in a production test fixture)
43
2160
O UT
45
= 47 dBm
2180
47
2200
49
0
-10
-20
-30
-40
-50
40
30
20
10
3 of 14
-20
-25
-30
-35
-40
-45
-50
-55
-60
18
17
16
15
41
33
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
I
V
DQ
Single-carrier WCDMA Drive-Up
35
DD
43
= 1.30 A
= 30 V, I
Gain vs. Output Power
V
37
I
DD
DQ
ACP Low
Output Power (dBm)
CW Performance
Output Power (dBm)
45
= 30 V, ƒ = 2170 MHz
= 1.80 A
39
DQ
= 1.30 A, ƒ = 2170 MHz
47
41
I
DQ
= 0.90 A
Efficiency
43
49
PTFB211803EL
PTFB211803FL
ACP Up
45
Rev. 05, 2010-11-10
51
47
53
49
40
35
30
25
20
15
10
5
0