BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 9

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

3
Table 2
Parameter
Junction - soldering point
1)For calculation of R
Figure 1
Data Sheet
Thermal Characteristics
Thermal Resistance
Total Power Dissipation
thJA
please refer to Application Note Thermal Resistance AN077
1)
Symbol
R
600
600
500
500
400
400
300
300
200
200
100
100
thJS
0
0
0
0
P
Min.
–
tot
=
f
(
T
s
)
50
50
Typ.
–
Values
9
Ts [°C]
Ts [°C]
Max.
120
100
100
Unit
K/W
150
150
Thermal Characteristics
Revision 1.0, 2010-10-22
Note / Test Condition
–
BFP450