BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 9
BFP 450 H6327
Manufacturer Part Number
BFP 450 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24 GHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
10 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Mounting Type
Surface Mount
Power - Max
450mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
4.5V
Gain
15.5dB
Transistor Type
NPN
Frequency - Transition
24GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450H6327XT
3
Table 2
Parameter
Junction - soldering point
1)For calculation of R
Figure 1
Data Sheet
Thermal Characteristics
Thermal Resistance
Total Power Dissipation
thJA
please refer to Application Note Thermal Resistance AN077
1)
Symbol
R
600
600
500
500
400
400
300
300
200
200
100
100
thJS
0
0
0
0
P
Min.
–
tot
=
f
(
T
s
)
50
50
Typ.
–
Values
9
Ts [°C]
Ts [°C]
Max.
120
100
100
Unit
K/W
150
150
Thermal Characteristics
Revision 1.0, 2010-10-22
Note / Test Condition
–
BFP450