BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 18

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

4.5
Figure 8
Figure 9
Data Sheet
Characteristic AC Diagrams
Transition Frequency
3rd Order Intercept Point
30
25
20
15
10
34
32
30
28
26
24
22
20
18
5
0
0
0
20
20
f
T
=
40
40
OIP
f
(
I
C
3
),
=
60
f
60
f
= 1 GHz,
(
I
C
),
80
80
Z
I
18
3V, 0.9GHz
4V, 0.9GHz
3V, 1.9GHz
4V, 1.9GHz
I
C
C
S
=
[mA]
[mA]
V
Z
CE
100
100
L
= 50 Ω,
= Parameter
120
120
V
4.00V
CE
,
140
140
f
= Parameters
160
160
3.00V
2.00V
1.00V
Electrical Characteristics
Revision 1.0, 2010-10-22
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BFP450