BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 21
BFP 450 H6327
Manufacturer Part Number
BFP 450 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24 GHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
10 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Mounting Type
Surface Mount
Power - Max
450mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
4.5V
Gain
15.5dB
Transistor Type
NPN
Frequency - Transition
24GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450H6327XT
Figure 14
Figure 15
Data Sheet
Input Matching
Source Impedance for Minimum Noise Figure
S
−0.1
−0.1
0.1
11
0
0.1
0
−0.2
−0.2
0.2
0.2
=
−0.3
−0.3
0.3
0.3
0.9GHz
f
0.1
0.1
1.9GHz
2.4GHz
−0.4
(
−0.4
0.4
0.4
f
1
0.45GHz
0.2 0.3 0.4 0.5
0.2 0.3 0.4 0.5
),
−0.5
−0.5
2
0.5
0.5
V
3
CE
= 3 V,
4
5
I
c
I
c
= 90mA
= 50mA
6
I
C
7
1
−1
21
1
−1
= 50 / 90 mA
1
1
1.5
1.5
8
0.03 to 10 GHz
9
2
2
Z
−1.5
−1.5
1.5
1.5
opt
10
3
3
=
4 5
4 5
f
−2
−2
2
2
(
f
),
−3
−3
3
3
V
−4
−4
4
4
90 mA
50 mA
CE
−5
−5
5
5
−10
−10
10
10
= 3 V,
Electrical Characteristics
I
Revision 1.0, 2010-10-22
C
= 50 / 90 mA
BFP450