BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 16
BFP 450 H6327
Manufacturer Part Number
BFP 450 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24 GHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
10 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Mounting Type
Surface Mount
Power - Max
450mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
4.5V
Gain
15.5dB
Transistor Type
NPN
Frequency - Transition
24GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450H6327XT
Figure 5
Figure 6
Data Sheet
Collector Current vs. Base Emitter Voltage
Base Current vs. Base Emitter Forward Voltage
1000
0.0001
0.01
100
0.001
0.1
10
0.01
1
0.1
10
0.6
1
0.6
0.65
0.65
0.7
0.7
16
V
V
BE
0.75
I
0.75
BE
C
[V]
=
[V]
f
I
(
B
V
=
BE
f
0.8
),
(
0.8
V
V
BE
CE
),
= 2 V
V
CE
0.85
0.85
= 2 V
Electrical Characteristics
Revision 1.0, 2010-10-22
0.9
0.9
BFP450