BAP50-03,135 NXP Semiconductors, BAP50-03,135 Datasheet - Page 3

DIODE PIN GP 50V 100MA SOD323

BAP50-03,135

Manufacturer Part Number
BAP50-03,135
Description
DIODE PIN GP 50V 100MA SOD323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP50-03,135

Package / Case
SC-76, SOD-323
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.35pF @ 5V, 1MHz
Resistance @ If, F
5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
500mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Termination Style
Solder Tails
Maximum Diode Capacitance
0.55 pF
Maximum Series Resistance @ Maximum If
5 Ohms
Maximum Series Resistance @ Minimum If
40 Ohms
Mounting Style
SMD/SMT
Power Dissipation
500 mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SOD-323
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
BAP50-03_4
Product data sheet
Fig 1.
Fig 3.
(fF)
(dB)
C
L
ins
(1) I
(2) I
(3) I
d
500
400
300
200
100
0
0
1
2
3
4
5
0.5
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
T
Diode inserted in series with a 50
biased via the analyzer Tee network.
Insertion loss of the diode as a function of
frequency; typical values
F
F
F
amb
= 10 mA
= 1 mA
= 0.5 mA
= 25 C.
4
1
j
= 25 C.
1.5
8
12
2
(1)
(2)
(3)
2.5
16
stripline circuit and
V
f (GHz)
mgs323
R
mgs319
(V)
Rev. 04 — 11 September 2009
20
3
Fig 2.
Fig 4.
(dB)
ISL
( )
r
10
10
D
10
15
20
25
10
10
0
5
1
3
2
0.5
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values
T
Diode zero biased and inserted in series with a 50
stripline circuit.
Isolation of the diode as a function of
frequency; typical values
2
amb
= 25 C.
1
10
j
= 25 C.
1
1.5
General purpose PIN diode
2
1
BAP50-03
I
© NXP B.V. 2009. All rights reserved.
2.5
F
(mA)
f (GHz)
mgs316
mgs317
10
3
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