BAP50-03,135 NXP Semiconductors, BAP50-03,135 Datasheet - Page 2

• Manufacturer Part Number: BAP50-03,135
• Description: DIODE PIN GP 50V 100MA SOD323
• Manufacturer: NXP Semiconductors

Specifications of BAP50-03,135

• Package / Case: SC-76, SOD-323
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Termination Style: Solder Tails
• Maximum Diode Capacitance: 0.55 pF
• Maximum Series Resistance @ Maximum If: 5 Ohms
• Maximum Series Resistance @ Minimum If: 40 Ohms
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SOD-323
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 5.
T
[1]
BAP50-03_4
Symbol
V
V
I
C
r
Product data sheet
R
D
j
F
R
d
= 25 C unless otherwise specified.
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Characteristics
Parameter
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 4.
Symbol
Per diode
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
I
V
f = 1 MHz; see
f = 100 MHz; see
F
R
R
= 50 mA
V
V
V
I
I
I
= 10 A
F
F
F
= 50 V
R
R
R
= 0.5 mA
= 1 mA
= 10 mA
= 0 V
= 1 V
= 5 V
Rev. 04 — 11 September 2009
Figure 1
Figure 2
Conditions
T
sp
= 90 C
Conditions
[1]
[1]
[1]
Min
-
-
-
Min
-
50
-
-
-
-
-
-
-
General purpose PIN diode
65
65
Typ
0.95
-
-
0.4
0.3
0.2
25
14
3
BAP50-03
Max
50
50
500
+150
+150
Typ
85
© NXP B.V. 2009. All rights reserved.
Max
1.1
-
100
-
0.55
0.35
40
25
5
Unit
V
mA
mW
Unit
K/W
C
C
Unit
V
V
nA
pF
pF
pF
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