BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFR30,235
Manufacturer Part Number
BFR30,235
Description
TRANS JFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR31235.pdf
(13 pages)
Specifications of BFR30,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 25 V
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
10 mA
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
1997 Dec 05
handbook, full pagewidth
N-channel field-effect transistors
(fA/ Hz)
V
(1) BFR31; I
(2) BFR30; I
DS
i n
= 10 V; T
10
10
10
10
1
4
3
2
10
D
D
amb
= 1 mA.
= 4 mA.
= 25 C.
Fig.17 Equivalent noise current source as a function of frequency; typical values.
10
2
10
3
9
10
4
10
5
BFR30; BFR31
(1)
(2)
Product specification
f (Hz)
MDA670
10
6