BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 2

• Manufacturer Part Number: BFR30,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR30,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 4mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 10 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
 Low level general purpose amplifiers in thick and
PINNING - SOT23
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
1997 Dec 05
V
V
P
I
y
SYMBOL
DSS
thin-film circuits.
DS
GSO
tot
N-channel field-effect transistors
fs
PIN

1
2
3
drain-source voltage
gate-source voltage
total power dissipation
drain current
common-source transfer admittance
BFR30
BFR31
BFR30
BFR31
SYMBOL
d
s
g
PARAMETER
drain
source
gate
(1)
DESCRIPTION
(1)
open drain
T
V
I
D
amb
GS
= 1 mA; V
= 0; V
 40 C
2
handbook, halfpage
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
DS
CONDITIONS
Marking codes:
BFR30: M1p.
BFR31: M2p.
DS
= 10 V
= 10 V; f = 1 kHz
Fig.1 Simplified outline and symbol.
Top view
1
3
CAUTION
2



4
1
1
1.5
MIN.
BFR30; BFR31
Product specification
g
MAM385
25
25
250
10
5
4
4.5
MAX.
d
s
V
V
mW
mA
mA
mS
mS
UNIT