BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFR30,235
Manufacturer Part Number
BFR30,235
Description
TRANS JFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR31235.pdf
(13 pages)
Specifications of BFR30,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 25 V
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
10 mA
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
PINNING - SOT23
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
1997 Dec 05
V
V
P
I
y
SYMBOL
DSS
thin-film circuits.
DS
GSO
tot
N-channel field-effect transistors
fs
PIN
1
2
3
drain-source voltage
gate-source voltage
total power dissipation
drain current
common-source transfer admittance
BFR30
BFR31
BFR30
BFR31
SYMBOL
d
s
g
PARAMETER
drain
source
gate
(1)
DESCRIPTION
(1)
open drain
T
V
I
D
amb
GS
= 1 mA; V
= 0; V
40 C
2
handbook, halfpage
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
DS
CONDITIONS
Marking codes:
BFR30: M1p.
BFR31: M2p.
DS
= 10 V
= 10 V; f = 1 kHz
Fig.1 Simplified outline and symbol.
Top view
1
3
CAUTION
2
4
1
1
1.5
MIN.
BFR30; BFR31
Product specification
g
MAM385
25
25
250
10
5
4
4.5
MAX.
d
s
V
V
mW
mA
mA
mS
mS
UNIT