BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 7

• Manufacturer Part Number: BFR30,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR30,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 4mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 10 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
Fig.13 Common source output admittance as a
V
Fig.11 Common source transfer admittance as a
f = 1 kHz; T
(1) I
(mA/V)
(μA/V)
DS
|y os |
y fs
7.5
2.5
10
10
10
= 10 V; f = 1 kHz; T
D
10
5
0
4
3
2
= 4 mA. (2) I
0
0
function of drain-source voltage;
typical values.
function of drain current; typical values.
amb
= 25 C.
(1)
(2)
D
= 1 mA.
amb
10
2
= 25 C.
BFR31
BFR30
20
4
I D (mA)
V DS (V)
BFR30
BFR31
MDA664
MDA666
30
6
7
handbook, halfpage
handbook, halfpage
V
V
(μA/V)
DS
DS
Fig.12 Common source output admittance as a
y os
(pF)
C is
= 10 V; f = 1 kHz; T
= 10 V; f = 1 MHz; T
Fig.14 Input capacitance as a function of
75
50
25
0
5
4
3
2
1
0
0
0
function of drain current; typical values.
gate-source voltage; typical values.
−1
amb
amb
2
= 25 C.
−2
= 25 C.
BFR30
BFR31
BFR30; BFR31
−3
4
Product specification
I D (mA)
−4
V GS (V)
MDA665
MDA667
−5
6