J111,126 NXP Semiconductors, J111,126 Datasheet - Page 5

• Manufacturer Part Number: J111,126
• Description: TRANSISTOR N-CH 40V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J111,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 6pF @ 10V (VGS)
• Resistance - Rds(on): 30 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 3 V
• Gate-source Breakdown Voltage: 40 V
• Drain Current (idss At Vgs=0): 20 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5810-2; J111,126

Philips Semiconductors
PACKAGE OUTLINE
July 1993
Plastic single-ended leaded (through hole) package; 3 leads
N-channel silicon field-effect transistors
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.56
b 1
IEC
b
1
0.45
0.40
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43
scale
EIAJ
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L 1
2.5
(1)
L
PROJECTION
EUROPEAN
J111; J112; J113
Product specification
ISSUE DATE
b
97-02-28
c
e 1
e
SOT54