J111,126 NXP Semiconductors, J111,126 Datasheet
J111,126
Specifications of J111,126
J111,126
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J111,126 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 ...
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Philips Semiconductors N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES High speed switching Interchangeability of drain and source connections Low R ...
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Philips Semiconductors N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate forward current (DC) Total power dissipation amb Storage temperature ...
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Philips Semiconductors N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS unless otherwise specified j Input capacitance MHz MHz ...
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Philips Semiconductors N-channel silicon field-effect transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads DIMENSIONS (mm are the original dimensions) UNIT 5.2 0.48 0.66 0.45 ...
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Philips Semiconductors N-channel silicon field-effect transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...