J111,126 NXP Semiconductors, J111,126 Datasheet - Page 3

• Manufacturer Part Number: J111,126
• Description: TRANSISTOR N-CH 40V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J111,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 6pF @ 10V (VGS)
• Resistance - Rds(on): 30 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 3 V
• Gate-source Breakdown Voltage: 40 V
• Drain Current (idss At Vgs=0): 20 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5810-2; J111,126

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
July 1993
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate forward current (DC)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate reverse current
Drain cut-off current
Drain saturation current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source on-state resistance
j
= 25 C unless otherwise specified
N-channel silicon field-effect transistors
up to T
V
V
V
V
V
I
DS
DS
DS
DS
G
GS
= 1 A; V
= 5 V; V
= 15 V; V
= 0.1 V; V
= 5 V; I
= 15 V; V
amb
= 50 C
D
DS
GS
GS
= 1 A
GS
DS
= 0
= 10 V
= 0
= 0
= 0
I
R
DSS
I
I
V
V
DSon
GSS
DSX
(BR)GSS
GS off
I
P
T
T
R
G
V
V
V
stg
j
tot
th j-a
DS
GSO
GDO
3
max.
max.
min.
min.
min.
max.
max.
max.
max.
max.
max.
max.
max.
=
J111
20
40
10
30
1
1
3
J112
J111; J112; J113
65 to
40
50
1
1
5
1
5
Product specification
400 mW
150
150
250 K/W
J113
40 V
40 V
40 V
50 mA
100
0.5
40
1
1
2
3
C
C
nA
nA
mA
V
V
V