CY8C3865LTI-014 Cypress Semiconductor Corp, CY8C3865LTI-014 Datasheet - Page 95

• Manufacturer Part Number: CY8C3865LTI-014
• Description: CY8C3865LTI-014
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C38xxr

Specifications of CY8C3865LTI-014

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 67MHz
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART, USB
• Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Data Converters: A/D 2x20b, D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: QFN EP
• Screening Level: Industrial
• Pin Count: 68
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C38
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 67 MHz
• Number Of Programmable I/os: 28 to 72
• Number Of Timers: 4
• Operating Supply Voltage: 0.5 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 38
• Eeprom Memory Size: 1KB
• Ram Memory Size: 4KB
• Cpu Speed: 67MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.7 Memory
Specifications are valid for –40 °C  T
except where noted.
11.7.1 Flash
Table 11-55. Flash DC Specifications
Table 11-56. Flash AC Specifications
11.7.2 EEPROM
Table 11-57. EEPROM DC Specifications
Table 11-58. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-59. NVL DC Specifications
Table 11-60. NVL AC Specifications
Document Number: 001-11729 Rev. *O
T
T
T
T
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time
(including JTAG, and so on)
Flash endurance
Flash data retention time
Erase and program voltage
Single row erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
NVL endurance
NVL data retention time
Description
Description
Description
Description
Description
Description
A
 85 °C and T
PRELIMINARY
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
V
Retention period measured from
last erase cycle (up to 100 K cycles)
V
Retention period measured from
last erase cycle
DDD
DDD
J
pin
 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
pin
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
3: CY8C38 Family Datasheet
100 k
1.71
Min
1.71
Min
Min
1.71
Min
Min
100
20
Min
1 M
1K
20
20
–
–
–
–
–
–
20
–
Typ
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
–
–
2
–
–
–
–
–
–
–
Max
Max
Max
Max
Max
Max
5.5
5.5
5.5
35
15
15
10
15
–
–
–
–
–
–
5
5
–
–
program/erase cycles
program/erase cycles
program/erase cycles
program/erase cycles
seconds
Units
Units
years
Units
Units
Units
years
Units
years
years
ms
ms
ms
ms
ms
ms
V
V
V
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