CY7C1360C-200BGCT Cypress Semiconductor Corp, CY7C1360C-200BGCT Datasheet - Page 27
![CY7C1360C-200BGCT](/photos/28/21/282110/119-bga_sml.jpg)
CY7C1360C-200BGCT
Manufacturer Part Number
CY7C1360C-200BGCT
Description
CY7C1360C-200BGCT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1360C-200AJXC.pdf
(34 pages)
Specifications of CY7C1360C-200BGCT
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1360C-200BGCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 38-05540 Rev. *K
33. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
34. DQs are in high Z when exiting ZZ sleep mode.
ALL INPUTS
(except ZZ)
Outputs (Q)
I
SUPPLY
CLK
ZZ
(continued)
t
ZZI
t ZZ
I DDZZ
Figure 9. ZZ Mode Timing
DON’T CARE
High-Z
[33, 34]
DESELECT or READ Only
t RZZI
CY7C1360C, CY7C1362C
t ZZREC
Page 27 of 34
[+] Feedback