CY7C1360C-200BGCT Cypress Semiconductor Corp, CY7C1360C-200BGCT Datasheet - Page 22
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CY7C1360C-200BGCT
Manufacturer Part Number
CY7C1360C-200BGCT
Description
CY7C1360C-200BGCT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1360C-200AJXC.pdf
(34 pages)
Specifications of CY7C1360C-200BGCT
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1360C-200BGCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05540 Rev. *K
Parameter
I
I
I
I
I
C
C
C
Θ
Θ
Note
Parameter
DD
SB1
SB2
SB3
SB4
3.3 V I/O Test Load
20. Tested initially and after any design or process change that may affect these parameters.
IN
CLK
I/O
JA
JC
2.5 V I/O Test Load
OUTPUT
OUTPUT
Parameter
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
DD
Z
Z
operating supply
0
0
[20]
Input capacitance
Clock input capacitance
Input/output capacitance
Description
= 50 Ω
= 50 Ω
Description
(a)
(a)
V
V
Description
[18, 19]
T
T
= 1.25 V
[20]
= 1.5 V
R
R
L
L
= 50 Ω
= 50 Ω
(continued)
Test conditions follow standard test
methods and procedures for
measuring thermal impedance,
according to EIA/JESD51.
V
f = f
V
V
f = f
V
V
f = 0
V
V
f = f
V
V
OUTPUT
OUTPUT
DD
DD
IN
DD
IN
DD
IN
DD
IN
3.3 V
2.5 V
INCLUDING
INCLUDING
MAX
≥ V
MAX
≤ 0.3 V or V
≤ 0.3 V or V
MAX
≥ V
= Max, I
= Max, device deselected,
= Max, device deselected,
= Max, device deselected, or
= Max, device deselected,
Figure 5. AC Test Loads and Waveforms
JIG AND
JIG AND
IH
IH
SCOPE
SCOPE
= 1/t
= 1/t
= 1/t
Test Conditions
or V
or V
T
5 pF
5 pF
OUT
CYC
CYC
CYC
A
IN
IN
Test Conditions
= 25 °C, f = 1 MHz,
IN
IN
V
≤ V
≤ V
V
= 0 mA,
DDQ
> V
> V
DD
Test Conditions
IL
IL
(b)
(b)
DDQ
, f = 0
R = 317 Ω
R = 1667 Ω
= 3.3 V
DDQ
= 2.5 V
– 0.3 V,
– 0.3 V
R = 351 Ω
R =1538 Ω
All speeds
All speeds
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
100 TQFP
V
Package
GND
GND
100 TQFP
V
DDQ
29.41
6.13
DDQ
Max
≤ 1 ns
≤ 1 ns
5
5
5
10%
10%
CY7C1360C, CY7C1362C
119 BGA
Package
ALL INPUT PULSES
ALL INPUT PULSES
119 BGA
34.1
14.0
Max
90%
90%
5
5
7
Min
–
–
–
–
–
–
–
–
–
–
–
(c)
(c)
165 FBGA
Package
165 FBGA
16.8
3
Max
5
5
7
Max
250
220
180
130
120
110
120
110
100
90%
90%
40
40
10%
10%
Page 22 of 34
≤ 1 ns
≤ 1 ns
°C/W
°C/W
Unit
Unit
pF
pF
pF
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
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