CY7C1360C-200BGCT Cypress Semiconductor Corp, CY7C1360C-200BGCT Datasheet - Page 16

• Manufacturer Part Number: CY7C1360C-200BGCT
• Description: CY7C1360C-200BGCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1360C-200BGCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP AC Switching Characteristics
Over the Operating Range
Document Number: 38-05540 Rev. *K
Notes
Clock
t
t
t
t
Output Times
t
t
Setup Times
t
t
t
Hold Times
t
t
t
Parameter
TCYC
TF
TH
TL
TDOV
TDOX
TMSS
TDIS
CS
TMSH
TDIH
CH
14. t
15. Test conditions are specified using the load in TAP AC test Conditions. t
CS
and t
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK clock cycle time
TCK clock frequency
TCK clock HIGH time
TCK clock LOW time
TCK clock LOW to TDO valid
TCK clock LOW to TDO invalid
TMS setup to TCK clock rise
TDI setup to TCK clock rise
Capture setup to TCK rise
TMS hold after TCK clock rise
TDI hold after clock rise
Capture hold after clock rise
[14, 15]
Description
R
/t
F
= 1 ns.
CY7C1360C, CY7C1362C
Min
50
20
20
–
–
0
5
5
5
5
5
5
Max
20
10
–
–
–
–
–
–
–
–
–
–
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Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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