CY62167ELL-45ZXI Cypress Semiconductor Corp, CY62167ELL-45ZXI Datasheet - Page 8

• Manufacturer Part Number: CY62167ELL-45ZXI
• Description: CY62167ELL-45ZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62167ELL-45ZXI

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP I
• Density: 16Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: SDR
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 21/20Bit
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 30mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 48
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 001-15607 Rev. *B
25. The internal write time of the memory is defined by the overlap of WE, CE
26. Data I/O is high impedance if OE = V
27. If CE
28. During this period the I/Os are in output state and input signals must not be applied.
a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing should be referenced to the edge of the signal that
terminates the write.
ADDRESS
BHE/BLE
DATA I/O
1
goes HIGH and CE
CE
CE
WE
OE
1
2
NOTE
28
2
goes LOW simultaneously with WE = V
(continued)
IH
t
.
SA
t
HZOE
Figure 3. Write Cycle No. 1 (WE controlled
t
AW
IH
, the output remains in a high impedance state.
t
SCE
1
= V
t
WC
IL
t
, BHE or BLE or both = V
BW
VALID DATA
t
t
PWE
SD
[25, 26, 27]
IL
, and CE
)
t
HD
2
= V
t
HA
IH
. All signals must be active to initiate
CY62167E MoBL
Page 8 of 15
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